发明名称 READ ONLY MEMORY AND WRITING METHOD FOR ITS DATA
摘要 <p>PURPOSE:To reduce the power consumption, by rewriting to '0' so as not to discharge bit lines for a memory cell frequently accessed, restoring it to data at the time of reading, and making the same logic data as writing requirement outputtable. CONSTITUTION:At the time of writing requirement, data of '0' is read out from memory cells M7, M32 in which data of '1' is to be written, and read-out data '1' having the same logic as that in writing requirement can be outputted by investing this data by a data restoring circuit 13. Also, data of '1' is read out from memory cells M2, M6, M8, M14-M16, M18, M22-24, M26, M30-M31 in which data of '0' is to be written, and read-out data '0' having the same logic as that in writing requirement can be outputted by inverting this data by the circuit 13. Thereby, memory cells discharging bit lines B1-B7 are M4, M13, M19, M20, M25, M27, M29, and M7, M10, M32, and the number of discharge can be decreased.</p>
申请公布号 JPH07249297(A) 申请公布日期 1995.09.26
申请号 JP19940041571 申请日期 1994.03.11
申请人 FUJITSU LTD 发明人 MAEDA TOKUNORI
分类号 G11C17/18;(IPC1-7):G11C17/18 主分类号 G11C17/18
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