| 摘要 |
PURPOSE: To obtain a method, in which a resistive conductive pattern is formed onto an aluminum nitride substrate by forming a film containing resistive chromium on the aluminum nitride substrate, shaping a heat-resistant metallic film and patterning the heat-resistant metallic layer and the resistive film into desired shape. CONSTITUTION: A chromium silicate monoxide film is formed onto the aluminum nitride substrate 12 as a film containing resistive chromium. Chromium silicate monoxide has extremely good adhesive properties with respect to the aluminum nitride substrate 12, and a thin-film resistor 18 can be formed directly onto the substrate 12. A heat-resistant metallic layer containing gold is formed onto a resistive film. One or more of conductive layers are formed onto the patterned heat-resistant metallic layer. Conductive lines 16 are constituted, while constituting the resistive film, the heat-resistant metallic layer and the patterned conductive layers. Resistors 18 are formed. A semiconductor die 14 is installed onto the substrate 12 and coupled electrically with the conductive lines 16. |
