| 摘要 |
<p>An SRAM has a plurality of respective memory cells coupled to a respective one of a plurality of word lines and to a pair of bit lines. The SRAM comprises IDDQ test means to render the word lines active in parallel by cumulatively increasing a number of active ones among the word lines. This permits the writing of a specific logic state in all cells of a column through the tiny bit line drivers that are progressively assisted by the cells already written, thus avoiding the use of additional heavy write circuitry for IDDQ test purposes only.</p> |
