| 摘要 |
PURPOSE:To obtain an electromagnetic wave detector capable of detecting even a weak electromagnetic wave when a plurality of electromagnetic waves large in intensity ratio are measured and a substrate processing apparatus having a function capable of measuring the change of a compsn. during substrate processing work. CONSTITUTION:A total reflection mirror 31 as an optical element allowing the characteristic X-rays 7a from an element high in intensity among characteristic X-rays emitted from a sample 1C to selectively transmit to attenuate the same and selectively reflecting the characteristic X-rays 7b from an element low in intensity and a slit 32 as an intensity adjusting mechanism adjusting the intensity of characteristic X-rays 7a are provided. The characteristic X-rays 7b reflected by the total reflection mirror 31 and the characteristic X-rays 7a adjusted in intensity by the slit 32 are detected by the same semiconductor X-ray detector 6 and, when characteristic X-rays large in intensity ratio generated from the elements in the sample 1C are measured, even a weak electromagnetic wave can be detected. |
