Method of manufacturing a semiconductor device.

摘要

In a semiconductor device including a substrate (21) having a wiring layer (22) formed on its major surface and a semiconductor element (11) having an electrode (12) formed on its major surface in which a face-down bonding is achieved with the major surface of the semiconductor element oppositely facing that major surface of the semiconductor substrate which is located opposite to the electrode on the semiconductor element, first bumps (13) formed of gold are formed on the electrode of the semiconductor element, second bumps (14) formed of an indium/tin alloy are formed on the first bumps and an electrical and mechanical bond is achieved, by the second bumps, between the first bumps and the wiring layer in which case the second bumps are heated to an extent not exceeding the melting point of the second bumps.