Dynamic memory having a ground control circuit.

摘要

In a dynamic memory, a ground control circuit is provided for each one memory cell array, and includes a first ground control transistor connected between ground and a source of a grounding transistor in all selection read circuits associated to the corresponding memory cell array. A gate of the transistor is connected to receive a block selection signal which is brought into a selection level at a predetermined timing when the corresponding memory cell array includes a selected memory cell, so that the source of the grounding transistor in all the selection read circuits associated to the corresponding memory cell array are connected to the ground through the first ground control transistor. Two second ground control transistors having a current drive capacity smaller than that of the first ground control transistor, are connected in parallel to the first ground control transistor. A gate of the second ground control transistors is connected to receive a plurality of reset signals which are in common to the plurality of memory cell arrays and which are brought into an active level at different timings during a period excluding an active period of the plurality of sense amplifiers.