| 摘要 |
An apparatus for electroplating a semiconductor substrate with a metallic film having a uniform thickness. Such a metallic film with a uniform thickness is formed by adjusting the arrangement of the anode so that the intensity distribution of the electric field generating on the main surface to be plated is made substantially uniform. The diameter of the anode is equal to or smaller than one-half that of the main surface of the semiconductor substrate so that the intensity distribution of the electric field on the main surface is substantially uniform. Further, the anode is formed into a mesh which amounts to an area factor equal to or smaller than 50%, which permits the fluctuation of the flux distribution of the plating solution to be neglected.
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