| 摘要 |
PURPOSE:To enable flat light emitting devices which emit light rays of different wavelengths and are formed on the same substrate by a method wherein a first electronic device and a second electronic device different from the first electronic device in kind or characteristics are provided, and either the first electronic device or the second electronic device is formed to serve as a flat light emitting device. CONSTITUTION:An optical integrated circuit is equipped with a first flat light emitting laser 2 (first electronic element) which emits light rays of wavelength 0.96mum and includes an epitaxial layer that is deposited to selectively coat the surface of an N-GaAs substrate 1 and a second flat light emitting laser 3 (second electronic element) which is different from the first flat light emitting laser 2 in characteristics, emits light rays of wavelength 0.98mum, and includes a semiconductor pellet bonded to the N-GaAs substrate 1 through the intermediary of a bonding member (InP layer 7a). By this setup, light sources which have a plurality of wavelengths or a pair of a light emitting device and a photodetective device variable in wavelength can easily be integrated on the same wafer, or separate flat optical devices can be individually formed under suitable conditions and then integrated together by bonding. |
