| 摘要 |
<p>PURPOSE:To provide an optical modulator whose elements are easily formed and which suitable for integration and for high-speed modulation with good reproducibility by making an absorption layer to have a constitution surrounded by an intrinsic semiconductor layer. CONSTITUTION:In an optical semiconductor device where InP semiconductor layers 70 including an absorption layer 58 consisting of InxGa1-xAsyP1-y (0<=x, y<=1) are formed in multilayer on an InP substrate 10, the absorption layer 58 is surrounded by an intrinsic semiconductor layer consisting of an InP clad layer. Thereby, an electric field impressed on the part of the absorption layer 58 is uniformed.</p> |
