发明名称 REFERENCE VOLTAGE GENERATING CIRCUIT
摘要 <p>PURPOSE: To provide a reference voltage generation circuit that can fully cope with effects due to the influence of fluctuations in process conditions and operating environment, in addition to the change in a power supply voltage which is inputted externally. CONSTITUTION: A power supply voltage VCC is boosted to a high-voltage generation circuit 45 for causing a breakdown in the diode of a clamp circuit 50, thus generating a boosted voltage V pump that is clamped to a constant level. Then, it is divided by a voltage-dividing circuit 60, thus outputting a reference voltage Vref. A breakdown voltage cannot be easily affected by the operating environment, such as process conditions and a temperature change, thus maintaining an extremely stable constant level. Therefore, the reference voltage can be stabilized, without being affected by the process conditions and temperature changes.</p>
申请公布号 JPH07194099(A) 申请公布日期 1995.07.28
申请号 JP19940293511 申请日期 1994.11.28
申请人 SAMSUNG ELECTRON CO LTD 发明人 HAYASHI EIKO
分类号 H01L27/04;G05F3/24;G11C11/407;H01L21/822;H02M3/07;(IPC1-7):H02M3/07 主分类号 H01L27/04
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