发明名称 |
Straight, uniform thermalmigration of fine lines |
摘要 |
Straight, fine molten wires (<0.002'') of a metal can be migrated through a solid, or matrix, body of semiconductor material by initiation of the migration of the melt and continuing the migration along a thermal gradient established and maintained at from 2 DEG to 10 DEG off the normally preferred crystal axis of migration by the thermal gradient zone melting processing.
|
申请公布号 |
US4159213(A) |
申请公布日期 |
1979.06.26 |
申请号 |
US19780942123 |
申请日期 |
1978.09.13 |
申请人 |
GENERAL ELECTRIC |
发明人 |
ANTHONY, THOMAS R;CLINE, HARVEY E;HOUSTON, DOUGLAS E |
分类号 |
H01L21/28;C30B13/02;C30B13/06;H01L21/208;H01L21/24;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|