发明名称 Straight, uniform thermalmigration of fine lines
摘要 Straight, fine molten wires (<0.002'') of a metal can be migrated through a solid, or matrix, body of semiconductor material by initiation of the migration of the melt and continuing the migration along a thermal gradient established and maintained at from 2 DEG to 10 DEG off the normally preferred crystal axis of migration by the thermal gradient zone melting processing.
申请公布号 US4159213(A) 申请公布日期 1979.06.26
申请号 US19780942123 申请日期 1978.09.13
申请人 GENERAL ELECTRIC 发明人 ANTHONY, THOMAS R;CLINE, HARVEY E;HOUSTON, DOUGLAS E
分类号 H01L21/28;C30B13/02;C30B13/06;H01L21/208;H01L21/24;(IPC1-7):H01L21/22 主分类号 H01L21/28
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