| 摘要 |
<p>A magnetoresistive layered structure having on a substrate (10) an electrically insulating layer (11) which consists of two layers, a lower layer (11') and an upper layer (11''), and two or more magnetoresistive, anisotropic ferromagnetic thin-films (F'1, F'2) each two of which are separated by an intermediate layer (I'1) of less than 50 Angstroms thickness formed of a substantially nonmagnetic, conductive alloy having at least two immiscible components therein. The thin-film (F'1) consists of two stratum wherein the lower stratum (F'1-1) has an upper stratum (F'1-2) sputtered deposited upon it, and thin-film (F'2) consists of two stratum wherein the lower stratum (F'2-2) has an upper stratum (F'2-1) sputtered deposited upon it. Finally a passivation and protection layer (12) is provided on the upper stratum (F'2-1) and a tungsten interconnection (13) connects layer (12) to upper layer (11').</p> |
