| 摘要 |
PURPOSE:To eliminate uneven reaction of resist due to reaction of oxidation generating agent of the resist generated in the case of lithography of an electron beam and atmospheric contamination and to improve uniformity of a width of a pattern beam of the resist. CONSTITUTION:A baking chamber 12 for baking in vacuum via gate valves 10a, 10b, 10c and a sub-chamber 10 are provided in a sample chamber 6 of an electron beam direct lithography apparatus, thereby making evacuating and holding times immediately after a wafer is formed by an EB direct lithography uniform, and resist is stabilized without exposing it with the atmosphere. |
