| 摘要 |
A compound semiconductor light-emitting device includes a cubic SiC substrate, and an GaxAlyIn1-x-yN (0</=x</=1, 0</=y</=1) layer formed on the (111) surface of the cubic-crystal SiC substrate. The surface of the GaxAlyIn1-x-yN layer, which opposes the substrate, is an N surface, and the light-emitting device has a pn junction.
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