发明名称 |
Method of forming a dram cell having a ring-type stacked capacitor |
摘要 |
A new method for fabricating a storage capacitor, on a dynamic random access memory (DRAM) cell, having a ring-type sidewall was accomplished. The method involves opening the self-aligned node contact to the source/drain area of the field effect transistor and forming the bottom capacitor electrode. The same photoresist mask used to open the self-aligned node contact is later used to mask and partially etch the polysilicon bottom capacitor electrode to form the ring-type sidewall on the bottom electrode. The storage capacitor is then completed by forming a thin capacitor dielectric and depositing the top electrode. The method provides a simple process that increases the capacitance of the storage capacitor by about 40 percent while not adversely affecting the leakage current.
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申请公布号 |
US5429979(A) |
申请公布日期 |
1995.07.04 |
申请号 |
US19940274415 |
申请日期 |
1994.07.13 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LEE, DANIEL HAO-TIEN;KOH, CHAO-MING;LEE, YU-HUA |
分类号 |
H01L21/8242;(IPC1-7):H01L21/70;H01L27/00 |
主分类号 |
H01L21/8242 |
代理机构 |
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主权项 |
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地址 |
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