THREE-PHASE FULL-WAVE RECTIFIER OF AC GENERATOR FOR VEHICLE

摘要

PURPOSE:To decrease the parasitic resistance of source and the channel resistance significantly by constituting a three-phase full-wave rectifier of an MOS power transistor using a single crystal SiC as a material. CONSTITUTION:An N-type voltage withstand layer 105 is formed on an N<+>-type substrate 106 of SiC, a P-type well region 103 is formed on the surface part of the N-type voltage withstand layer 105, and an N<+>-type region 104 is formed on the surface part of the P-type well region 103. Only the trench forming region is opened on the wafer surface to make a trench 108 and a gate insulation film 109 is formed on the surface of the trench 108 before a gate electrode 110 is formed. A metal electrode 111 is then brought into contact with the surface of the N<+> region 104 and the P-well region 103 whereas a metal electrode 112 is brought into contact with the surface of the N<+> type substrate 106 thus completing an element. A low loss three-phase full-wave rectifier can be obtained by employing single crystal SiC as a material thereby decreasing the parasitic resistance of source and the channel resistance.