发明名称 |
Method of producing a photolithographic mask |
摘要 |
The disclosure relates to EDM (Exposure, Defocus and Mask fabrication latitude) methodology and involves a photomask, a method of producing the same, a method of exposing using the same, and a method of manufacturing a semiconductor device using the same. Correlations are found involving a large number of mask parameters, thus permitting optimisation of a lithographic process parameter taking account of mask parameters as well as other lithographic process parameters One of defocus latitude (III), mask pattern dimension (e.g. linewidth) latitude (II) and exposure latitude (I) is combined with data in predetermined ranges for the other two latitudes to determine the values of the first latitude for optimisation of a lithographic process parameter. <IMAGE> |
申请公布号 |
EP0656565(A1) |
申请公布日期 |
1995.06.07 |
申请号 |
EP19940117536 |
申请日期 |
1994.11.07 |
申请人 |
SONY CORPORATION |
发明人 |
TSUDAKA, KEISUKE, C/O SONY CORPORATION;SUGAWARA, MINORU, C/O SONY CORPORATION |
分类号 |
G03F1/68;G03F1/70;G03F7/20;G03F9/02;H01L21/027 |
主分类号 |
G03F1/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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