发明名称 |
HEAT TREATMENT METHOD AND DEVICE THEREFOR |
摘要 |
PURPOSE:To improve the temperature uniformity in the surface of a processed body neither causing any slippage nor imposing strain at all during the temperature rising time. CONSTITUTION:A planar heating source 20 is provided above a vertical process tube 12. A lifting holder 30 loaded with a processed body W is provided toward a processing position P2 inside this vertical process tube 12. This holder 30 delivers the wafer W between adjacent load lock chambers 52, 54 at the delivery position P1 in a delivery chamber 56 beneath the vertical process tube 12. Furthermore, this holder 30 once stops at an intermediate stopping position P3 between the delivery position P1 and the processing position P2 so as to preheat the processed body W at the maximum heat absorption efficiency temperature e.g. 400-600 deg.C by the radient heat from a surface heating source 20. |
申请公布号 |
JPH07147257(A) |
申请公布日期 |
1995.06.06 |
申请号 |
JP19940148484 |
申请日期 |
1994.06.07 |
申请人 |
TOKYO ELECTRON LTD;TOKYO ELECTRON TOHOKU LTD |
发明人 |
OKASE WATARU |
分类号 |
H01L21/22;H01L21/205;H01L21/31;H01L21/324;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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