| 摘要 |
PURPOSE:To provide a structure which, its structure itself, is smaller than de Broglie wavelength by, while utilizing an upper silicon layer an an SOI substrate, making it a quantum thin wire with a branch whose profile is rectangular and the width and height of base are specified. CONSTITUTION:On the surface of SOI substrate 20 a silicon nitride film of 0.05-0.5mum in thickness which is to be used as a mask 2 is film-formed, and then by resist coating, photolithography with ordinary light exposure, and dry etching such as RIE for patterning, the mask 2 with a square window open is formed. Then the SOI substrate 20 an which the mask 2 was formed is etched with anisotropic etching liquid, so that the first surface 3 which is to be a surface of quantum thin wire whose profile is rectangular (width of base is 2-50nm, height is 4-70.6nm) exposes itself. At that time, relating to the first surface 3, the silicon substrate surface is covered with a mask and stopped with a mask end part due to etching anisotropy, it does not advance in the direction of first surface 3. |
