| 摘要 |
PURPOSE:To allow local formation of a highly reliable thin oxide film having no damage without requiring any intricate step by forming high electronic level regions locally on the surface of a substrate thereby adsorbing oxygen selectively to the region. CONSTITUTION:Regions 2, 3 having high electronic level are formed locally on the surface of a substrate 1 and oxygens 4-6 are adsorbed selectively thereto thus forming oxide films 7, 8 locally. For example, impurities are implanted into regions 2, 3 on the surface of a substrate 1 where an oxide film is formed thus elevating the surface electronic level in the regions 2, 3. When oxygens 5 are fed to the surface, they are diffused and bonded selectively with surface electrons having high energy level. Consequently, the supplied oxygens are adsorbed collectively to the surface at 'the regions 2, 3 and produce Si-O-Si bonds thus forming oxide films 7, 8 locally. |
