发明名称 PRODUCTION OF METALLIC CHALCOGENIDE COMPOUND SUPER LATTICE
摘要 PURPOSE:To obtain a super lattice structure without using expensive equipment such as thin film is grown under ultra-high vacuum by using plural growing baths different from each other in composition of a chalcogenide ion and a metallic ion and forming a thin film in a specific condition. CONSTITUTION:A metallic chalcogenide compound laminated body is produced by forming successively two or more kinds of the metallic chalcogenide compound thin film having 3Angstrom to 500Angstrom film thickness on the surface of a substrate from two or more kinds of solutions different from each other in composition of the chalcogenide ion and the metallic ion. As the thin film growing method, for example, a method for growing the thin film by preparing individually a metallic ion solution and a chalcogenide containing solution, mixing and reacting both solutions just before thin film growing and bringing the resulting product into contact with the substrate, and a method for growing the thin film on the surface of the substrate by dipping the substrate after mixing both solutions and accelerating the reaction by heating or adding a pH regular are used.
申请公布号 JPH07133200(A) 申请公布日期 1995.05.23
申请号 JP19930275572 申请日期 1993.11.04
申请人 ASAHI CHEM IND CO LTD 发明人 MATSUI MASAHIRO;NAMIKATA TAKASHI;WATANABE TAKAYUKI
分类号 C30B29/68;H01L31/0248;H01L31/04;H01L33/06;H01L33/28 主分类号 C30B29/68
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