CLEANING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method includes the steps of etching the oxide film on the silicon substrate to expose the silicon substrate, and etching the substrate to an etching depth of 30-200 angstrom by using the mixed gases of CHF series gas and O2 plasma gas, i.e. CF4/O2 plasma or HBr/Cl2 plasma gases thereby removing the residuals by a two-step cleaning process to improve the thermal oxidation of the wafer and reduce the junction leakage.