发明名称 |
CURRENT INFUSING TYPE EQUALIZING CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE |
摘要 |
The equalizer has at least one current source connected to a power source node and controlled by voltage on the data line of the semiconductor memory device, and at least including a current injecting means for injecting current to the data line through the power source node, the voltage on the data line increasing or decreasing in the direction of increasing current flowing via the current injecting means so as to decrease the difference of voltages on the data line to a designated level.
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申请公布号 |
KR950004560(B1) |
申请公布日期 |
1995.05.02 |
申请号 |
KR19920013819 |
申请日期 |
1992.07.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JONG, CHOL - MIN;SO, YONG - HO;CHOE, JIN - YONG;IM, HYON - KYU |
分类号 |
G11C11/407;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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