发明名称 LSI memory circuit
摘要 CMOS components (Q41,46,49,50,52,53) as well as bipolar transistors are used. The fast bipolar transistors are used in the output circuits in the form of address buffers (Q47,48,51,54), clock output drivers and data output buffers.These enable fast charge and discharge of the gate capacitance of the logic transistors resulting in reduced access times whilst the low power MOS and CMOS elements are used for data storage and logic functions
申请公布号 DE3546847(C2) 申请公布日期 1995.04.27
申请号 DE19853546847 申请日期 1985.02.13
申请人 HITACHI, LTD., TOKIO/TOKYO, JP 发明人 OGIUE, KATSUMI, TOKIO/TOKYO, JP;SUZUKI, YUKIO, TOKIO/TOKYO, JP;MASUDA, IKURO, HITACHI, IBARAKI, JP;ODAKA, MASANORI, TOKIO/TOKYO, JP;UCHIDA, HIDEAKI, TAKASAKI, GUNMA, JP
分类号 G11C7/00;G11C7/06;G11C7/10;G11C7/12;G11C8/00;G11C8/06;G11C8/08;G11C8/10;G11C8/18;H03K19/0944;(IPC1-7):G11C7/00 主分类号 G11C7/00
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