| 摘要 |
<p>PURPOSE:To improve the withstand voltage and homogeneity of the insulating layer of a field emitting element. CONSTITUTION:Al is ICB-evaporated on a Si base. The Al is grown on the Si (111) face with a crystal line parallel to the base. When Al is ICB-evaporated thereon in oxygen atmosphere, the insulating layer of an alpha-Al2O3 thin film is heteroepitaxially grown. The surface of the insulating layer is smooth, and satisfactory crystallinity can be provided. The determined epitaxial relation between the grown film and the base is alpha-Al2O3(0001)//Al(111)//Si(111), or alpha-Al2 O3(0227)//Al(111)//Si(111).</p> |
