发明名称 PLASMA VAPOR PHASE REACTOR
摘要 PURPOSE:To uniformize the thickness of a film formed on the surface of a substrate through a plasma vapor phase reaction by impressing electric fields from a plurality of sets of parallel paired electrodes upon the film forming surface of the substrate set in a reaction space in which plasma is provided. CONSTITUTION:A vapor phase reaction is made to take place while a first electric field 90 is impressed upon the film forming surface of a substrate in almost parallel with the film forming surface form a pair of electrodes 23 and 25 and, at the same time, a second electric field 91 perpendicular to the first electric field 90 is impressed upon the film forming surface from another pair of electrodes 72 and 82. The electrodes 23 and 25 and 72 and 82 are respectively connected to a first oscillator and a second oscillator 85.
申请公布号 JPH0794417(A) 申请公布日期 1995.04.07
申请号 JP19930019435 申请日期 1993.01.13
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;TASHIRO MAMORU;MIYAZAKI MINORU
分类号 C23C16/50;C23C16/44;H01L21/205;H01L21/31;H01L31/04 主分类号 C23C16/50
代理机构 代理人
主权项
地址