发明名称 |
Methods for manufacturing a storage electrode of DRAM cells |
摘要 |
A method for manufacturing a storage electrode of DRAM cells having a higher degree of integration in which the space between neighboring storage electrodes is made narrower than that obtainable by conventional lithographic techniques. The storage electrode is formed with a cylindrical, dual cylindrical, or jar-shaped structure to obtain a large surface area, and thus a high-capacitance.
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申请公布号 |
US5403767(A) |
申请公布日期 |
1995.04.04 |
申请号 |
US19920998512 |
申请日期 |
1992.12.30 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM, JAE-KAP |
分类号 |
H01L21/28;H01L21/822;H01L21/8242;H01L27/04;H01L27/10;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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