MOLECULAR-BEAM EPITAXIAL DEVICE

摘要

PURPOSE:To control the crystal growth rate while rotating a substrate to measure the growth rate by making a frequency analysis of a reflection-type high- speed electron-diffraction image intensity. CONSTITUTION:This device is provided with a substrate holder 2 capable of rotating a substrate 1 and a reflection-type high-speed electron-diffraction device, and the substrate 1 is rotated to grow a crystal in the molecular-beam epitaxial device. The following means are used in the device. Namely, the reflection-type high-speed electron-diffraction image formed on a fluorescent screen 5 is picked up by a television camera 6, the diffraction intensity detected by the camera 6 is frequency-analyzed in a controller 7 to measure the crystal growth rate. The molecular beam intensity is automatically controlled by the controller 7 based on the measured value (to control the power to be supplied to a heater 4).