| 摘要 |
PURPOSE:To provide a semiconductor laser device which is capable of reducing a threshold, and minimizing temperature dependence of device characteristics by using a GaInAs strained quantum well structure which is easy to control a wavelength. CONSTITUTION:This invention relates to a semiconductor laser device which clamps an active layer 13 which is designed under strained quantum wall structure which laminates a GaInAsP barrier layer 13a and a GaInAs wall layer 13b with an InP clad layer 11 and a p type InP clad layer 15 and further inserts GaInAsP optical guide layers 12 and 14 between each of the clad layers 11 and 15. The active layer 13 is formed based on metal organic vapor deposition. Moreover, impurities, such as Si are added to the active layer 13 and the optical guide layer 14 where the concentration of Si is set to: 1X10<16>cm<-3> to 5X10<17>cm<-3>. |
