| 摘要 |
<p>A method which removes the limitations existing on the cooling capability of ordinary TE coolers (10) provides for thermally connecting in parallel a hierarchy of central (12) and auxiliary (14, 16, 18) thermoelectric couples to provide deep cooling of the central thermoelectric couple (12) to temperatures below 100 degrees Kelvin, and as low as 70 degrees Kelvin or lower. These basic deep TE cooling units (10) may serve as constituent components for the construction of one-stage deep TE modules which are capable of relatively high pumping capacity at very low temperatures. The present invention makes deep TE cooling possible with existing thermoelectric materials, and existing high volume semiconductor manufacturing techniques can be adapted for production of the present invention, so that solid state deep TE cooling becomes available for a wide variety of applications, including deep cooling of solid state electronics.</p> |
