LASER DIODE AND MANUFACTURING METHOD THEREOF

摘要

The the semiconductor laser diode having light from two channels of the identical cavity length merged to increase the light intensity has the second conductor current limiting layer on the surface of the first conductor semiconductor substrate; the second conductor current limit layer of the V channel; the first clyde layer of the first conductor layer on the top of the current limit layer; the activating layer of the first and the second conductor; the second clyde layer formed on the activated layer; the cap layer of the second conductor on the top of the second clad layer; the oxidized layer on the cap layer; the second contact on the cap layer; the first contact on the surface of the semiconductor substrate.