发明名称 FORMATION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To easily bond two leads and to easily cut and remove the other end side of a lead on one side by a method wherein a bonding region in which the surface of a lead on the other side is exposed and which has partly reduced a lead-width size and a cutting region whose cross-sectional area is smaller than the cross-sectional area of the lead on the other side are formed in the central part of the lead on one side. CONSTITUTION:A bonding region 4A1 in which the surface of an inner lead 5A is exposed when overlapped with the inner lead 5A and which has partly reduced a lead-width size is formed in the central part of an inner lead 4A. In addition, a cutting region 4A2 whose cross-sectional area is small as compared with the cross-sectional area of the inner lead 5A when overlapped with the inner lead 5A is former. Then, the inner lead 4A is overlapped with the inner lead 5A, the bonding region 4A1 is bonded to the surface of the inner lead 5A exposed from it, and the other end side of the inner lead 4A is cut and removed from the cutting region 4A2. Thereby, even when a lead arrangement pitch is made finer, both inner leads can be bonded easily.
申请公布号 JPH0758281(A) 申请公布日期 1995.03.03
申请号 JP19930200485 申请日期 1993.08.12
申请人 HITACHI LTD 发明人 IWATANI AKIHIKO;ANJO ICHIRO;ARITA JUNICHI;NISHIMURA ASAO;HANEDA MITSUAKI;ICHITANI MASAHIRO;SUMIYA AKIRO
分类号 H01L21/60;H01L23/50;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/60
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