发明名称 |
Semiconductor device and manufacturing method of the same |
摘要 |
Source/drain diffusion regions are formed at a surface of a silicon substrate, which is substantially flat and has a first surface roughness. Surfaces of the source/drain diffusion regions are covered with a polysilicon film having a surface which has a second surface roughness larger than the first surface roughness. The polysilicon film is removed by etching to expose the surfaces of the source/drain diffusion regions. Owing to this etching for removal, the surfaces of the source/drain diffusion regions have a third surface roughness larger than the first surface roughness.
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申请公布号 |
US5394012(A) |
申请公布日期 |
1995.02.28 |
申请号 |
US19930136064 |
申请日期 |
1993.10.14 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KIMURA, HIROSHI |
分类号 |
H01L21/3205;H01L21/02;H01L21/285;H01L21/768;H01L21/822;H01L21/8242;H01L23/52;H01L23/522;H01L27/04;H01L27/10;H01L27/108;(IPC1-7):H01L23/48;H01L29/44;H01L29/52;H01L29/60 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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