Method of processing a polycide structure

摘要

A method substantially eliminating consumption of silicon from semiconductor devices is provided. The method includes controlling gases within the environment wherein the semiconductor device is positioned. The environment is formed to include an inert gas and oxygen. The oxygen content is formed to have a concentration between approximately 1x101 and 1x105 parts per million. Such an oxygen concentration substantially prevents converting silicon from the semiconductor device into silicon monoxide thereby substantially eliminating silicon consumption.