发明名称 |
METHOD OF DEPOSITING THIN GROUP IIIA METAL FILMS |
摘要 |
A method of depositing a Group IIIA metal layer of high purity on a substrate comprises pyrolyzing contacting the substrate with a tritertiary butyl compound of the Group IIIA metal and pyrolyzing the compound to leave the Group IIIA metal deposited on the substrate. The method of the invention may be used on any suitable substrate, such as silicon or polyimide. The method of the invention may be used for the growth of Group IIIA/silicon alloys as well as for depositing semi-conducting III-V alloys such as, for example, AlGaAs, AlInAs and AlSb. |
申请公布号 |
WO9504168(A1) |
申请公布日期 |
1995.02.09 |
申请号 |
WO1994GB01654 |
申请日期 |
1994.07.29 |
申请人 |
EPICHEM LIMITED;JONES, ANTHONY, COPELAND |
发明人 |
JONES, ANTHONY, COPELAND |
分类号 |
C01G15/00;C23C16/18;C23C16/20;C23C18/08;C23C18/10 |
主分类号 |
C01G15/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|