| 摘要 |
<p>Planarising a semiconducting substrate comprises forming flat active area mesas and trenches (31,32,33,34) on the surface, depositing a conformal dielectric, or dielectric precursor, over the face (15) forming depressions above the trenches, and depositing a layer of Si (25) over this. the Si is patterned with photoresist to form resist blocks (30) in the depressions, the Si etched to leave segments beneath these blocks, the Si annealed to convert it to oxide, and the face polished to the tops of the active areas to give a planar surface. Also claimed is a method as above for a Si substrate to which the dielectric is silica, a poly-Si layer is then deposited having a thickness of one-half the depth of the depressions, and the planarisation then proceeds as above.</p> |
