发明名称 MANGETORESISTIVE HEAD
摘要 The surface roughnes of a back plate (1) made out of CaTiO is reduced by a lapping and SOG treatment. A bias electric conductor (4) is made by vaporizing aluminium in a thickness a 1 μm on the back plate (1) and by etching and then, SiO2 in the thickness of 0.5 μm is sputtered on the electric conductor (4) for insulation. A magnetoresistive element (3) is made by sputtering permalloy in the thickness of 400 ∦. After forming a pattern, a barb pole (2) is made by etching vaporized layer of Cr 500 ∦ and Au 1 μm at an angle of 45-65≦̸. A magnetoresistive head is made by glass bonding a protective back plate having 10 μm of alumina.
申请公布号 KR950000560(B1) 申请公布日期 1995.01.24
申请号 KR19920011608 申请日期 1992.06.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HYO - SANG
分类号 G11B5/39;(IPC1-7):G11B5/39 主分类号 G11B5/39
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