| 摘要 |
PURPOSE:To provide a semiconductor device and a manufacturing method, in which a contact state between a capacitor dielectric film made of high permittivity material and a layer insulating film under the capacitor dielectric film can be improved, and leak current from a lower capacitor electrode is prevented effectively. CONSTITUTION:In a semiconductor device, a contact layer 11 made of TiO2, ZrO2, Ta2O5, Si3N4 or Al2O3 is formed between a silicon-oxide layer insulating film 10 and a high-permittivity film 15. |
