Flash memory testing process using data erasing and new data writing en block, or block per block

摘要

In the process a preset logic value is written into the memory cells, forming individual blocks of a memory with block function. The written logic values are read-out from the memory cells in individual blocks. If the written and the read-out logic values are not the same, a decision is taken that the respective memory cell is faulty. If the number of faulty cells in a tested block has reached a preset value, the testing of such block is abandoned. Independent claims are included for a memory tester.