发明名称 Multiple tunnel junction thermotunnel device on the basis of ballistic electrons
摘要 The present invention is a tunnel diode, in which the space between the emitter electrode and the collector electrode is occupied by a porous material which has a thickness less then the free mean free path of an electron in the porous material. The present invention also includes heat pumping and power generation devices comprising the tunnel diode.
申请公布号 US2006220058(A1) 申请公布日期 2006.10.05
申请号 US20050560139 申请日期 2005.12.09
申请人 TAVKHELIDZE AVTO 发明人 TAVKHELIDZE AVTO
分类号 H01L29/00;H01L31/028;H01L35/00;H01L37/00;H01L49/00 主分类号 H01L29/00
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