MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To hardly generate charge up by making a photoresist in a process of ion implantation of impurities of high concentration thinner than a photoresist used in other photolithography process during formation of an integrated circuit. CONSTITUTION:A photoresist 109 having a thickness tRE1 is formed on a polycrystalline silicon 107 for forming a polycrystalline silicon pattern by etching. Meanwhile, for use in a process for implanting high concentration impurity ion such as As ion 1100, a photoresist 119 is applied to a polycrystalline silicon layer 115 and a thickness thereof is made tRE3. Here, the thickness tRE3 is made thinner than the thickness tRE1 and charge up is made hard to generate, which is easy to generate when high concentration ion impurity implantation is performed at a high beam current. Thereby, an integrated circuit, of stable and highly reliable performance can be acquired.