| 摘要 |
PURPOSE:To form an amorphous silicon film having excellent light-resistant deterioration characteristics at a fast growth rate by bringing the gaseous raw material of a specific chlorosilane compound and a hydrogen-containing gas excited by electron cyclotron resonance into contact under specific conditions. CONSTITUTION:A plasma forming chamber 2 is supplied with high-purity hydrogen as a plasma forming gas, and ECR plasma is formed. A film forming chamber 1 is supplied with a chlorosilane compound as a gaseous raw material shown in formula SiHxCl4-x (x represents an integer of 0-3) under the state, and gas plasma and a base material 3 heated at 200-500 deg.C are brought into contact, thus precipitating an amorphous silicon film. The atomic ratio (H/Cl) of hydrogen atoms in hydrogen gas fed into a film forming device to chlorine atoms in the chlorosilane compound is set in 0.1-50 at that time. Accordingly, the amorphous silicon film having excellent light-resistant deterioration characteristics and high quality can be formed at fast film precipitation speed. |
