| 摘要 |
PURPOSE: To provide a MOS transistor where the electrical characteristics of an element are improved and its manufacturing method. CONSTITUTION: A gate electrode 28 is formed on a first-conduction-type semiconductor substrate 14 via a gate insulation film 27. Source region and drain region 34 of a second conduction type that is opposite to a first conduction type are formed with a constant spacing in a substrate that is parallel with the longer direction of the gate electrode 28. An impurity region 26 for adjusting a threshold voltage of a second conduction type, an impurity region 22 for diffusion barrier of a second conduction type, and an impurity region 18 for preventing punch-through of a first conduction type with a higher diffusion coefficient than the impurity for diffusion barrier are formed at a channel region that is formed on a substrate 14 between source and drain regions for entering a bulk from the surface of the substrate 14, thus improving a short-channel effect and a punch-through characteristic without reducing a current drive capacity.
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