Composite circuit of bipolar transistors and MOS transistors and semiconductor integrated circuit device using the same

摘要

A composite circuit device of bipolar transistors and MOS transistors has a series connection of an NPN transistor for pull-up and a PNP transistor for pull-down. The composite circuit device has independent base drive circuits so provided that the base of the NPN transistor for pull-up is electrically isolated from the base of the PNP transistor for pull-down during the on-off switching operation. The composite circuit device is also provided with base precharge circuitry for pre-charging the base of the PNP transistor during the off operation state thereof. A composite circuit is also provided with circuitry for enhancing the turn-on switching speed of the pull-down PNP transistor. Additionally, a composite circuit of bipolar transistors and MOS transistors is constituted by a switch having a high input impedance and low on-resistance which can be applied as a component of an electronic circuit.