| 摘要 |
<p>PURPOSE:To enable execution of writing at a low voltage without lowering a capacity of holding written data, by forming a tunnel insulation film out of a tunnel silicon oxide film and a tunnel silicon nitride-oxide film provided on this tunnel silicon oxide film. CONSTITUTION:A tunnel silicon oxide film 12 is formed as a first insulation film in the surface region of a semiconductor substrate 11. Since the thickness of this tunnel silicon oxide film 12 lessens when a tunnel silicon nitride-oxide film 13 is formed, the film 12 is formed to be thicker than the thickness which lessens. Then, a silicon nitride film 14 is formed on the tunnel silicon nitride- oxide film 13 so that the tunnel silicon nitride-oxide film 13 be formed to have a uniform film thickness. Moreover, a silicon oxide film 15 is formed on the silicon nitride film 14 and a gate electrode 16 of a gate electrode material is formed on the silicon oxide film 15. According to this constitution, high integration can be attained without lowering a capacity of holding written data.</p> |
