MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevend the increase of a leakage current and realize the reduction of effective film thikness, in a capacitive insulating film constituted of an SiN film and an SiO2 film, in the electric charge storing capacitor structure which is espesially necessary to the memory storage of a DRAM. CONSTITUTION:A lower SiO2 film 4 is formed on the surface of a capacitor lower electrode 3 constituted of polycrystalline Si film. The quality of an SiN film 5 which is deposited in the next process is increased by depositing a very thin Si film 9 on the lower SiO2 film 4 and nitriding the film 9. Thereby the burnout in the following oxidation process is prevended.