发明名称 |
Nonvolatile capacitor random access memory |
摘要 |
The disclosure relates to a MOSFET-protected nonvolatile capacitor cell which has a storage gate and a nonvolatile stack thereunder, the cell having a heavily doped n+ ring surrounding the storage gate and an n-type tank disposed beneath the stack and electrically connected to the n+ type ring.
|
申请公布号 |
US5357459(A) |
申请公布日期 |
1994.10.18 |
申请号 |
US19910748483 |
申请日期 |
1991.08.22 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
CHAPMAN, RICHARD A. |
分类号 |
G11C11/404;G11C14/00;G11C16/02;H01L27/105;(IPC1-7):G11C11/24;G11C11/40 |
主分类号 |
G11C11/404 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|