| 摘要 |
PURPOSE:To sufficiently cope with the manufacture of a next-generation semiconductor by using the apparatus which can be applied in a wide range from a small capacity up to a large capacity, which can gasify a liquid raw material completely and which can continuously control the mass flow rate of a raw- material gas with extremely high accuracy. CONSTITUTION:A raw-material liquid L whose mass flow rate has been controlled is brought into contact with a carrier gas which is at high speed, and it is changed into an atomized raw-material mist by an atomizing nozzle 3. After that, the atomized raw-material mist is evaporated, and it is carried out to a next process together with the carrier gas.
|
