| 摘要 |
A mask and a method for manufacturing the same, which can form a correct pattern on a semiconductor wafer having steps, includes a mask substrate having steps oppositely corresponding to steps on said semiconductor wafer and an opaque mask pattern for cutting off light from the mask substrate to thereby enable the same exposure focus to be provided to the step and non-step regions on the semiconductor wafer. Further, a clean and correct pattern can be formed by controlling the amount of exposure irradiated onto the step and non-step regions on the semiconductor wafer. |
