发明名称 |
WELL BIAS CONTROL CIRCUIT AND METHOD |
摘要 |
<p>PURPOSE: A well bias control circuit and method are provided to prevent the damage of a semiconductor chip by coping with the instantaneously change of external power voltage and to protect an interface circuit. CONSTITUTION: A transistor constitutes an interface circuit between first supply voltage and second supply voltage. A first control circuit(110) provides high voltage among the first supply voltage and the second supply voltage to an output node. A second control circuit(120) provides the high voltage among the first supply voltage and the second supply voltage to an output node. The second control circuit partly recompenses an operation of the first control circuit. A power source comparator(130) compares the VDDUSB of an USB port and VBATT of the battery power.</p> |
申请公布号 |
KR101106490(B1) |
申请公布日期 |
2012.01.20 |
申请号 |
KR20100097154 |
申请日期 |
2010.10.06 |
申请人 |
ABOV SEMICONDUCTOR CO., LTD. |
发明人 |
PARK, SUNG MAN |
分类号 |
H03K17/08;H01L29/78 |
主分类号 |
H03K17/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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